| PART |
Description |
Maker |
| AM27C128 AM27C128-120 AM27C128-120DC AM27C128-120D |
112dB 192kHz 24-BIT SCH DAC
128 Kilobit (16 K x 8-Bit) CMOS EPROM
Octal D-Type Flip-Flops With Clear 20-PDIP 0 to 70
112dB 192kHz 24-BIT SCH DAC 16K X 8 UVPROM, 90 ns, CDIP28
112dB 192kHz 24-BIT SCH DAC 16K X 8 UVPROM, 120 ns, CDIP28
112dB 192kHz 24-BIT SCH DAC 16K X 8 UVPROM, 55 ns, CDIP28
112dB 192kHz 24-BIT SCH DAC 16K X 8 OTPROM, 90 ns, PDIP28
Quad 2-input exclusive-NOR gates with open collector outputs 14-SO 0 to 70 16K X 8 OTPROM, 120 ns, PDIP28
112dB 192kHz 24-BIT SCH DAC 16K X 8 OTPROM, 120 ns, PQCC32
112dB 192kHz 24-BIT SCH DAC 一一二分92kHz4位三星援
Quad /S-/R latches 16-SOIC 0 to 70 一一二分92kHz4位三星援
112dB 192kHz 24-BIT SCH DAC 16K X 8 UVPROM, 250 ns, CDIP28
Triple 3-input positive-NOR gates 14-SOIC 0 to 70
|
AMD[Advanced Micro Devices]
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| SOM-5760 SOM-5760-S1A1E SOM-5760-S6A1E |
Intel? Atom SCH US15W XL COM-Express CPU Module
Intel? Atom?/a> SCH US15W XL COM-Express CPU Module
Intel垄莽 Atom垄芒 SCH US15W XL COM-Express CPU Module
|
Advantech Co., Ltd.
|
| BUL62A |
Regulated Output Power; 1.6kVDC Isolation; Over Current and Over Voltage Protection; Six-Sided Shield; No Derating to 63C; Standard 2 x 1 Package
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| BUL72A |
Regulated Output Power; 1.6kVDC Isolation; Over Current and Over Voltage Protection; Six-Sided Shield; No Derating to 63C; Standard 2 x 1 Package
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
SEME-LAB[Seme LAB]
|
| BUT70W 8602 |
HIGH VOLTAGE NPN POWER TRANSISTOR
HIGH POWER NPN TRANSISTOR
From old datasheet system
HIGH VOLTAGE NPN POWER TRANSISTOR
8-bit MCU for automotive, 16 Kbyte Flash/ROM, 10-bit ADC, 4 timers, SPI, SCI
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| BUL741 |
The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching s
High voltage fast-switching NPN Power Transistor
|
ST Microelectronics, Inc.
STMicroelectronics
|
| 2N6671 2N6672 2N6673 |
HIGH VOLTAGE NPN TYPES FOR OFF LINE POWER SUPPLIES AND OTHER HIGH VOLTAGE SWITCHING APPLICATIONS
|
List of Unclassifed Man...
ETC[ETC]
|
| ULN2005 ULN2003 ULN2003L ULN2005A ULN2005L ULN2003 |
HIGH-VOLTAGE, HIGH-CURRENT DARLINGTON ARRAYS 高电压，大电流达林顿阵列
Flash Memory IC; Memory Size:64Mbit; Access Time, Tacc:90ns; Package/Case:48-TSOP; Supply Voltage Max:3V; Leaded Process Compatible:Yes; Peak Reflow
High Voltage / High Current Darlington Transistor Arrays
HIGH-VOLTAGE/ HIGH-CURRENT DARLINGTON ARRAYS
(ULN2001A - ULN2005A) High Voltage / High Current Darlington Arrays
500 mA, 50 V, 7 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
|
List of Unclassifed Man...
Electronic Theatre Controls, Inc.
Sprague Electric
ETC[ETC]
List of Unclassifed Manufacturers
VISHAY SPRAGUE
|
| BUL76A |
POWERLINE: RP20-S_DEW - 4:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 84%
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
TT electronics Semelab Limited
Seme LAB
|
| SML20W65 SML20B56 |
HIGH POWER TERMINATION 56 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
TT electronics Semelab, Ltd.
Seme LAB
|
